TK31E60W,S1VXS

MOSFET DTMOS IV 系列，Toshiba### MOSFET 晶体管，Toshiba

MOSFET N 通道，TK3x 系列，

### MOSFET ，Toshiba

欧时:
Toshiba DTMOSIV 系列 Si N沟道 MOSFET TK31E60W,S1VXS, 31 A, Vds=600 V, 3引脚 TO-220封装

艾睿:
This TK31E60W,S1VXS power MOSFET from Toshiba can be used for amplification in your circuit. Its maximum power dissipation is 230000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with dtmosiv technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 30.8A 3-Pin TO-220

Verical:
Trans MOSFET N-CH Si 600V 30.8A 3-Pin3+Tab TO-220

儒卓力:
**N-CH 600V 30,8A 88mOhm TO220-3 **