IPD65R420CFDBTMA1

IPD65R420CFDBTMA1概述

DPAK N-CH 700V 8.7A

表面贴装型 N 通道 8.7A(Tc) 83.3W(Tc) PG-TO252-3


得捷:
MOSFET N-CH 650V 8.7A TO252-3


艾睿:
Trans MOSFET N-CH 700V 8.7A 3-Pin2+Tab DPAK T/R


安富利:
650V CoolMOS™ CFD2 is Infineon"s second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.


TME:
Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3


Win Source:
MOSFET N-CH 650V 8.7A TO252


IPD65R420CFDBTMA1数据文档
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