L6393DTR

半桥 IGBT MOSFET 灌:290mA 拉:430mA

半桥 栅极驱动器 IC 非反相 14-SO

得捷:
IC GATE DRVR HALF-BRIDGE 14SO

立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA

艾睿:
Use this L6393DTR power driver from STMicroelectronics to power your transistors. This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V.

安富利:
MOSFET DRVR 600V 0.43A 1-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC T/R

Chip1Stop:
Driver 600V 0.43A 1-OUT Hi/Lo Side Half Brdg Inv/Non-Inv Automotive 14-Pin SOIC T/R

Verical:
Driver 600V 0.43A 1-OUT Hi/Lo Side Half Brdg Inv/Non-Inv Automotive 14-Pin SOIC T/R

儒卓力:
**HaBr MOSvIGBTDr 600V SO-14 SMD **

Win Source:
IC GATE DRIVER HALF BRDGE 14SO