Medium Power Transistor 32V, 0.8A
Medium Power Transistor 32V, 0.8A
Features
1 Very Low VCEsat.
VCEsat= 0.1VTyp.
̈́IC/ IB= 500УA / 50mAͅ
2 High current capacity in compact package.
3 Complements the 2SB1197K.
Structure
Epitaxial planar type
NPN silicon transistor