IXFA4N100Q

IXFA4N100Q概述

D2PAK N-CH 1000V 4A

N-Channel 1000V 4A Tc 150W Tc Surface Mount TO-263 IXFA


得捷:
MOSFET N-CH 1000V 4A TO263


艾睿:
If you need to either amplify or switch between signals in your design, then Ixys Corporation&s;s IXFA4N100Q power MOSFET is for you. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.


Verical:
Trans MOSFET N-CH 1KV 4A 3-Pin2+Tab D2PAK


DeviceMart:
MOSFET N-CH 1000V 4A TO-263


IXFA4N100Q数据文档
型号 品牌 下载
IXFA4N100Q

IXYS Semiconductor

下载
IXFA10N80P

IXYS Semiconductor

下载
IXFA16N50P

IXYS Semiconductor

下载
IXFA3N120TRL

IXYS Semiconductor

下载
IXFA180N10T2

IXYS Semiconductor

下载
IXFA130N10T

IXYS Semiconductor

下载
IXFA8N50P3

IXYS Semiconductor

下载
IXFA14N60P3

IXYS Semiconductor

下载
IXFA6N120P

IXYS Semiconductor

下载
IXFA110N15T2

IXYS Semiconductor

下载
IXFA7N60P3

IXYS Semiconductor

下载

锐单商城 - 一站式电子元器件采购平台