BSO612CVGHUMA1

Infineon SIPMOS 系列 Si N/P沟道 MOSFET BSO612CVGHUMA1, 2 A、3 A, Vds=60 V, 8引脚 DSO封装

SIPMOS® N 和 P 通道 MOSFET

得捷:
MOSFET N/P-CH 60V 2A 8-SOIC

欧时:
Infineon SIPMOS 系列 Si N/P沟道 MOSFET BSO612CVGHUMA1, 2 A、3 A, Vds=60 V, 8引脚 DSO封装

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSO612CVGHUMA1 power MOSFET is for you. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes sipmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R

TME:
Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/-2A; 2W; PG-DSO-8

Verical:
Trans MOSFET N/P-CH 60V 3A/2A Automotive 8-Pin DSO T/R

Win Source:
MOSFET N/P-CH 60V 2A 8-SOIC