低边 IGBT MOSFET 灌:9A 拉:9A
Correctly change the biasing voltage to a high power transistor by using this power driver by Technology. This device has a maximum propagation delay time of ±100 ns and a maximum power dissipation of 0.11 mW. Its maximum power dissipation is 0.11 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has an operating temperature range of -65 °C to 150 °C. This device has a minimum operating supply voltage of 42.2K V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MIC4421ZT | Microchip 微芯 | 下载 |
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| MIC4428BM | Micrel 迈瑞 | 下载 |
| MIC45212-1YMP-T1 | Microchip 微芯 | 下载 |
| MIC45208-2YMP-T1 | Microchip 微芯 | 下载 |
| MIC45212-1YMP-TR | Microchip 微芯 | 下载 |
| MIC45212-2YMP-TR | Microchip 微芯 | 下载 |
| MIC45212-2YMP-T1 | Microchip 微芯 | 下载 |
| MIC45205-2YMP-T1 | Microchip 微芯 | 下载 |
| MIC45205-2YMP-TR | Microchip 微芯 | 下载 |
| MIC45208-1YMP-TR | Microchip 微芯 | 下载 |