40V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
VBRDSS= 40V; RDSON= 0.05 ID= 7A
DESCRIPTION
This new generation of TRENCH MOSFETs from utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
APPLICATIONS
• DC - DC Converters
• Audio Output Stages
• Relay and Solenoid driving
• Motor control
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