IPP200N25N3GXKSA1

INFINEON  IPP200N25N3GXKSA1  晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP200N25N3GXKSA1, 64 A, Vds=250 V, 3引脚 TO-220封装

得捷:
MOSFET N-CH 250V 64A TO220-3

艾睿:
Create an effective common drain amplifier using this IPP200N25N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 250V 64A 3-Pin3+Tab TO-220 Tube

TME:
Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3

Verical:
Trans MOSFET N-CH 250V 64A 3-Pin3+Tab TO-220 Tube

Newark:
# INFINEON  IPP200N25N3GXKSA1  MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V