SSM6P05FU

SSM6P05FU 复合场效应管 -20V -200mA/-0.2A SOT-363/SC70-6/UF6 marking/标记 DH 高速开关

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -200mA/-0.2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 3300mΩ@ VGS = -4V, ID = -100mA 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6~-1.1V 耗散功率PdPower Dissipation| 300mW/0.3W Description & Applications| TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ●Power Management Switch ●High Speed Switching Applications ●Small package ● Low on resistance : Ron = 3.3 Ω max @VGS = −4 V Ron = 4.0 Ω max @VGS = −2.5 V Low gate threshold voltage 描述与应用| 场效应硅P沟道MOS类型  ●电源管理开关  ●高速开关应用 ●小型封装 ●低导通电阻RON =3.3Ω（最大）（@ VGS=-4 V） RON =4.0Ω（最大值）（@ VGS=-2.5 V） 低栅极阈值电压