VISHAY TSFF5210.. 红外发射器, 高速, 10 °, T-1 3/4 5mm, 100 mA, 1.5 V, 15 ns, 15 ns
The is a 870nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a clear, untinted plastic package.
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High speed
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High reliability
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High radiant power
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High radiant intensity
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ϕ = ±10° Angle of half intensity
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Low forward voltage
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Suitable for high pulse current operation
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Good spectral matching with Si photodetectors
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12MHz High modulation bandwidth fc