VISHAY SIS443DN-T1-GE3 晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
The is a -40V P-channel TrenchFET® Power MOSFET. Suitable for use in notebook battery charging, DC/DC converter and adapter switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
型号 | 品牌 | 下载 |
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SIS443DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS412DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS413DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS427EDN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS406DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS407ADN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS410DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS436DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS456DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS434DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
SIS454DN-T1-GE3 | Vishay Semiconductor 威世 | 下载 |