BFR193FH6327XTSA1

晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE

Summary of Features:

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For low noise, high-gain amplifiers up to 2 GHz

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For linear broadband amplifiers

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fT = 8 GHz, NFmin = 1 dB at 900 MHz

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Pb-free RoHS compliant and halogen-free WEEE compliant product

欧时:
Infineon BFR193FH6327XTSA1

得捷:
RF TRANS NPN 12V 8GHZ TSFP-3

贸泽:
射频RF双极晶体管 RF BIP TRANSISTOR

e络盟:
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE

艾睿:
In addition to offering the benefits of traditional BJTs, the BFR193FH6327XTSA1 RF amplifier from Infineon Technologies is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 12V 0.08A 3-Pin TSFP T/R

Verical:
Trans RF BJT NPN 12V 0.08A Automotive 3-Pin TSFP T/R

Win Source:
TRANS RF NPN 12V 80MA TSFP-3