ZTX853 编带
- 双极 BJT - 单 NPN 100 V 4 A 130MHz 1.2 W 通孔 E-Line（TO-92 兼容）
立创商城:
NPN 100V 4A
得捷:
TRANS NPN 100V 4A E-LINE
贸泽:
Bipolar Transistors - BJT NPN Medium Power
艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN ZTX853 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN 100V 4A 3-Pin E-Line
Chip1Stop:
Trans GP BJT NPN 100V 4A 3-Pin E-Line
TME:
Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Verical:
Trans GP BJT NPN 100V 4A Automotive 3-Pin E-Line
Newark:
# DIODES INC. ZTX853 Bipolar BJT Single Transistor, NPN, 100 V, 130 MHz, 1.2 W, 4 A, 200 hFE
Win Source:
TRANS NPN 100V 4A E-LINE