IGBT 晶体管 10A-600V fast IGBT
You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP10NC60S | ST Microelectronics 意法半导体 | 下载 |
| STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP3NC120HD | ST Microelectronics 意法半导体 | 下载 |
| STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
| STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
| STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
| STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP40V60F | ST Microelectronics 意法半导体 | 下载 |