VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
The is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIR422DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR408DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR426DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR472DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR496DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR468DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR462DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR466DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR460DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR416DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR464DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |