BCW66KGE6327HTSA1

Infineon BCW66KGE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装

通用 NPN ，

得捷:
TRANS NPN 45V 0.8A SOT23

欧时:
Infineon BCW66KGE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTORS

艾睿:
If your circuit&s;s specifications require a device that can handle high levels of voltage, Infineon Technologies&s; NPN BCW66KGE6327HTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Verical:
Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R