STMICROELECTRONICS STN3NF06 晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
The is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.