IPD90P04P405ATMA1

INFINEON  IPD90P04P405ATMA1  晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 40V 90A TO252-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD90P04P405ATMA1, 90 A, Vds=40 V, 3引脚 DPAK TO-252封装

立创商城:
P沟道 40V 90A

e络盟:
功率场效应管, MOSFET, P沟道, 40 V, 90 A, 0.0035 ohm, TO-252 DPAK, 表面安装

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPD90P04P405ATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 40V 90A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET P-CH 40V 90A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD90P04P405ATMA1  MOSFET Transistor, P Channel, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V

Win Source:
MOSFET P-CH 40V 90A TO252-3 / P-Channel 40 V 90A Tc 125W Tc Surface Mount PG-TO252-3-313