PTFB211501EV1R250XTMA1

PTFB211501EV1R250XTMA1概述

Trans MOSFET N-CH 65V 3Pin H-36248 T/R

* Broadband internal matching * Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF * Average output power = 40 W * Linear Gain = 18 dB * Efficiency = 32% * Adjacent channel power = –34 dBc * Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 150 W - Efficiency = 55% * Integrated ESD protection: Human Body Model, Class 2 minimum * Capable of handling 10:1 VSWR @ 30 V, 150 W CW output power * Pb-Free and RoHS compliant

PTFB211501EV1R250XTMA1数据文档
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