静态随机存取存储器 4Mb,High-Speed Low PowerAsync,10ns,3.3v
DESCRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.
FEATURES
• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA typ. CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS61LV25616AL-10LQLI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256AL-10TL | Integrated Silicon SolutionISSI | 下载 |
| IS61WV6416BLL-12TL | Integrated Silicon SolutionISSI | 下载 |
| IS61C1024-15J | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256-15T | ICSI 矽成 | 下载 |
| IS61C1024AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61C6416AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV6416-10TI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI-TR | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV5128BLL-10BI | Integrated Silicon SolutionISSI | 下载 |