SSM5N15FE

SSM5N15FE 复合场效应管 30V 200mA/0.2A SOT-353/SC70-5/ESV marking/标记 DP 高速开关

最大源漏极电压VdsDrain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| 200mA/0.2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 4Ω@ VGS = 4V, ID = 10mA 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.8~1.5V 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type High-Speed Switching Applications Analog-Switch Applications • Input impedance is high; driving current is extremely low. • Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. • High-speed switching • Housed in an ultra-small package suitable for high density mounting 描述与应用| 场效应的硅N沟道MOS类型 高速开关应用 模拟开关应用 •输入阻抗高，驱动电流极低。 •可直接驱动一个CMOS设备，即使在低电压下，由于低 栅极阈值电压。 •高速开关 •坐落在一个超小型封装，适用于高密度安装