AFT18S230SR3

RF Power Transistor,1805 to 1880MHz, 207W, Typ Gain in dB is 19 @ 1880MHz, 28V, LDMOS, SOT1799

Overview

The 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.

## Features RF Performance Table

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.9| 32.0| 7.2| –35.0| –19

1840 MHz| 19.1| 32.0| 7.1| –35.0| –18

1880 MHz| 19.0| 32.0| 6.8| –34.0| –11