迅雷IGBT Thunderbolt IGBT
Minimize the current at your gate with the IGBT transistor from . It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 830000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT150GT120JR | Microsemi 美高森美 | 下载 |
| APT100GT120JU2 | Microsemi 美高森美 | 下载 |
| APT15GN120KG | Microsemi 美高森美 | 下载 |
| APT11GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT15GT60KRG | Microsemi 美高森美 | 下载 |
| APT15D100KG | Microsemi 美高森美 | 下载 |
| APT15D60KG | Microsemi 美高森美 | 下载 |
| APT15DQ100KG | Microsemi 美高森美 | 下载 |
| APT15D60K | Microsemi 美高森美 | 下载 |
| APT15DQ120KG | Microsemi 美高森美 | 下载 |
| APT15DQ60BG | Microsemi 美高森美 | 下载 |