BUK6C2R1-55C,118

晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V

The BUK6C2R1-55C is a N-channel enhancement-mode intermediate level gate drive FET in a plastic package using advanced TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

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High current handling capability up to 320A

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Low conduction losses due to very low ON-state resistance

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Suitable for standard and logic level gate drive sources

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Suitable for thermally demanding environments due to 175°C rating