射频金属氧化物半导体场效应RF MOSFET晶体管 300W 50V RF MOS 20dB 175MHz N-Ch
This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 625000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STAC2932FW | ST Microelectronics 意法半导体 | 下载 |
| STAC2943 | ST Microelectronics 意法半导体 | 下载 |
| STAC4933 | ST Microelectronics 意法半导体 | 下载 |
| STAC4932F | ST Microelectronics 意法半导体 | 下载 |
| STAC150V2-350E | ST Microelectronics 意法半导体 | 下载 |
| STAC3932F | ST Microelectronics 意法半导体 | 下载 |
| STAC4932B | ST Microelectronics 意法半导体 | 下载 |
| STAC2932BW | ST Microelectronics 意法半导体 | 下载 |
| STAC2942FW | ST Microelectronics 意法半导体 | 下载 |
| STAC2942BW | ST Microelectronics 意法半导体 | 下载 |
| STAC2933 | ST Microelectronics 意法半导体 | 下载 |