MMBZ15VAL数据手册PDF_MMBZ15VAL中文资料-锐单商城

MMBZ15VAL概述

NXP MMBZ15VAL 静电保护装置, TVS, 21 V, TO-236AB, 3 引脚, 900 mV, 360 mW

The is a low capacitance unidirectional double ESD Protection Diode in a common anode configuration. The device is designed for ESD and transient overvoltage protection of up to two signal lines.

.: Unidirectional ESD protection of two lines

.: ESD protection up to 30kV contact discharge

.: Bidirectional ESD protection of one line

.: IEC 61000-4-2, level 4 ESD

.: * 40W Rated peak pulse power PPPM

.: 5nA Ultra low leakage current IRM

MMBZ15VAL详细参数

MMBZ15VAL数据文档

型号	品牌	下载
MMBZ15VAL	NXP 恩智浦	下载
MMBZ9V1ALT1G	ON Semiconductor 安森美	下载
MMBZ18VAL,215	NXP 恩智浦	下载
MMBZ18VALT1G	ON Semiconductor 安森美	下载
MMBZ12VAL,215	NXP 恩智浦	下载
MMBZ18VCL,215	NXP 恩智浦	下载
MMBZ6V2AL,215	NXP 恩智浦	下载
MMBZ10VAL,215	NXP 恩智浦	下载
MMBZ12VDL,215	NXP 恩智浦	下载
MMBZ15VDL,215	NXP 恩智浦	下载
MMBZ33VAL,215	NXP 恩智浦	下载