FQU10N20CTU数据手册PDF_FQU10N20CTU中文资料-锐单商城

FQU10N20CTU概述

Trans MOSFET N-CH 200V 7.8A 3Pin3+Tab IPAK Rail

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary,

planar stripe, DMOS technology.

Features

• 7.8 A,200 V, RDSon = 360 mΩ Max.@ VGS = 10 V, ID= 3.9 A

• Low Gate Charge Typ. 20 nC

• Low Crss Typ. 40.5pF

• 100% Avalanche Tested

贸泽:
MOSFET N-CH/200V/10A/QFET

艾睿:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail

安富利:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail

Verical:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail

Win Source:
MOSFET N-CH 200V 7.8A IPAK

FQU10N20CTU数据文档