IXGN100N170

Trans IGBT Chip N-CH 1700V 160A 735000mW 4Pin SOT-227B

This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.

得捷:
IGBT MOD 1700V 160A 735W SOT227B

贸泽:
IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A

艾睿:
This IXGN100N170 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.

Verical:
Trans IGBT Chip N=-CH 1700V 160A 735000mW 4-Pin SOT-227B