IXXN100N60B3H1

Trans IGBT Chip N-CH 600V 440A 500000mW 4Pin SOT-227B

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.

得捷:
IGBT MOD 600V 170A 500W SOT227B

艾睿:
You won&s;t need to worry about any lagging in your circuit with this IXXN100N60B3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.

Verical:
Trans IGBT Chip N-CH 600V 440A