BSC340N08NS3GATMA1

INFINEON  BSC340N08NS3GATMA1  晶体管, MOSFET, N沟道, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 80V 7A/23A TDSON-8-5

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC340N08NS3GATMA1, 23 A, Vds=80 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 80 V, 23 A, 0.0275 ohm, SuperSOT, 表面安装

艾睿:
This BSC340N08NS3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP

Chip1Stop:
Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC340N08NS3GATMA1  MOSFET Transistor, N Channel, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V

Win Source:
MOSFET N-CH 80V 23A TDSON-8