MMT10B230T3 瞬态抑制二极管TVS/ESD 170V 100A DO-214AA/SMB-230V 标记RPDF
极性Polarization| 双向 Bidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 170V 反向击穿电压VBRBreakdown Voltage| 265V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 4000W 峰值脉冲电流IPPmPeak Forward Surge Current| 100A 额定耗散功率PdPower dissipation| Description & Applications| Thyristor Surge Protectors;Specification Features • Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec Guaranteed at the extended temp range of −20°C to 65°C • The Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in on−SemiconductorDevices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation. • Surface Mount Technology SMT • Complies with GR1089 Second Level Surge Spec at 500 Amps 2x10 µsec Waveforms • Indicates UL Registered − File #E210057 • Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG;MMT10B310T3: RPDJ, and Date Code 描述与应用| 浪涌保护器;规格特性 •杰出的高浪涌电流能力:100安培10x1000微秒保证在扩展温度范围-20°C至65°C •该MMT10B230T3系列是用来帮助设备满足各种监管要求包括:贝尔通讯1089,ITU K.20和K.21,IEC950,UL 1459及1950和FCC第68部分 •双向保护在一个单一设备 •瞬态电压限制,幅度或速率变化不大 •免于Wearout机制目前在SemiconductorDevices •故障保护,短裤当压力过大,防止续 未受保护的行动 •表面贴装技术(SMT) •符合GR1089二级电涌规格500安培2×10微秒波形 •指示UL注册 - 文件#E210057 •器件标识:MMT10B230T3:RPDF MMT10B260T3:RPDG MMT10B310T3:RPDJ,日期代码
型号 | 品牌 | 下载 |
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MMT10B230T3 | ON Semiconductor 安森美 | 下载 |
MMT10B230T3G | ON Semiconductor 安森美 | 下载 |
MMT10B310T3G | ON Semiconductor 安森美 | 下载 |
MMT10B260T3G | ON Semiconductor 安森美 | 下载 |
MMT10B310T3 | ON Semiconductor 安森美 | 下载 |
MMT10B260T3 | ON Semiconductor 安森美 | 下载 |
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MMT10B350T3G | ON Semiconductor 安森美 | 下载 |
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