BSS84P H6327数据手册PDF_BSS84P H6327中文资料-锐单商城

BSS84P H6327概述

INFINEON BSS84P H6327 晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V

The from is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.

.: Automotive grade AEC-Q101 qualified

.: Drain to source voltage Vds of -60V

.: Gate to source voltage of ±20V

.: Continuous drain current Id of -170mA

.: Power dissipation pd of 360mW

.: Operating temperature range -55°C to 150°C

.: Low on state resistance of 8ohm at Vgs -4.5V

BSS84P H6327详细参数

BSS84P H6327数据文档

型号	品牌	下载
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BSS806NEH6327XTSA1	Infineon 英飞凌	下载
BSS84LT1	ON Semiconductor 安森美	下载
BSS806NL6327HTSA1	Infineon 英飞凌	下载