IPAW60R360P7S

IPAW60R360P7S概述

N沟道 600V 9A

Description:

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge Q G of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features:

**Efficiency**

.
600V P7 enables excellent FOM R DSonxE oss andR DSonxQ G

**Ease-of-use**

.
Integrated ESD diode from 180mN and above R DSons
.
Integrated gate resistor R G
.
Rugged body diode
.
Wide portfolio in through hole and surface mount packages
.
Both standard grade and industrial grade parts are available

Benefits:

**Efficiency**

.
Excellent FOMs R DSonxQ G/R DSonxE oss enable higher efficiency

**Ease-of-use**

.
Ease-of-use in manufacturing environments by stopping ESD failures occurring
.
Integrated R G reduces MOSFET oscillation sensitivity
.
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
.
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
.
Suitable for a wide variety of end applications and output powers
.
Parts available suitable for consumer and industrial applications
IPAW60R360P7S数据文档
型号 品牌 下载
IPAW60R360P7S

Infineon 英飞凌

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IPAW60R600CEXKSA1

Infineon 英飞凌

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IPAW60R380CEXKSA1

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IPAW60R280CEXKSA1

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IPAW60R190CEXKSA1

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IPAW60R190CE

Infineon 英飞凌

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IPAW60R380CE

Infineon 英飞凌

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IPAW60R600CE

Infineon 英飞凌

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IPAW60R280CE

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IPAW60R360P7SXKSA1

Infineon 英飞凌

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IPAW60R180P7SXKSA1

Infineon 英飞凌

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