AFT09S220-02NR3

RF Power Transistor,850 to 960MHz, 220W, Typ Gain in dB is 19.5 @ 920MHz, 28V, LDMOS, SOT1823

Overview

The 54 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 850 to 960 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

920 MHz| 19.5| 35.8| 7.0| –36.7| –13

940 MHz| 19.3| 35.4| 7.0| –36.8| –12

960 MHz| 19.0| 35.3| 7.0| –36.9| –12

### 880 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

865 MHz| 20.3| 35.8| 7.0| –36.2| –14

880 MHz| 20.1| 35.8| 7.0| –36.5| –14

895 MHz| 19.7| 35.5| 7.0| –36.0| –11