1N4106数据手册PDF_1N4106中文资料-锐单商城

1N4106概述

硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435

• LEADLESS PACKAGE FOR SURFACE MOUNT

• LOW CURRENT OPERATION AT 250 µA

• METALLURGICALLY BONDED

MAXIMUM RATINGS

Junction and Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ TEC= +125°C

Power Derating: 10mW/ °C above TEC= +125°C

Forward Derating @ 200 mA: 1.1 Volts maximum

艾睿:
Diode Zener Single 12V 5% 500mW 2-Pin DO-35 Bag

TME:
Diode: Zener; 400mW; 12V; Package: tape; DO35; 50nA

Verical:
Zener Diode Single 12V 5% 200Ohm 500mW 2-Pin DO-35 Bag

1N4106数据文档