KRX102E NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA 200mW/0.2W R1=R2=47KΩ SOT-553/TESV 标记BM 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V/-50V 集电极连续输出电流IC Collector CurrentIC | 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1 | 47KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 0.21 直流电流增益hFE DC Current GainhFE | 截止频率fT Transtion FrequencyfT | 200MHz 耗散功率Pc Power Dissipation | 200mW/0.2W Description & Applications | Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TESV.Thin Extereme Super mini type with 5 pin. •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process. 描述与应用 | 特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •包括两个设备TESV（薄Extereme超级迷你型5针） •内置偏置电阻。 •简化电路设计。 •减少了部件数量和制造工艺