BSZ018NE2LSI

INFINEON  BSZ018NE2LSI  晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

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Save overall system costs by reducing the number of phases in multiphase converters

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Reduce power losses and increase efficiency for all load conditions

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Save space with smallest packages like CanPAK™, S3O8 or system in package solution

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Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in