NXP PUMB3 双极晶体管阵列, BRT, PNP, 50 V, 200 mW, -100 mA, 200 hFE, SOT-363
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | -50V 集电极连续输出电流IC Collector CurrentIC | -100MA/-0.1A 基极输入电阻R1 Input ResistanceR1 | 4.7KΩ 基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 基极与基极-发射极输入电阻比R1/R2 Base-Emitter Input Resistance RatioR1/R2 | 直流电流增益hFE DC Current GainhFE | 200 截止频率fT Transtion FrequencyfT | 250MHZ 耗散功率Pc Power Dissipation | 200MW/0.2W 描述与应用 Description & Applications | PNP / PNP型resistor-equipped ; R1 = 4.7 kΩ,R2 =开放