IPD65R380C6BTMA1

IPD65R380C6BTMA1 编带

表面贴装型 N 通道 10.6A（Tc） 83W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 650V 10.6A TO252-3

立创商城:
N沟道 650V 10.6A

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; IPD65R380C6BTMA1 power MOSFET. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3

Verical:
Trans MOSFET N-CH 700V 10.6A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 650V 10.6A TO252-3