BC856B RF

小信号 PNP 晶体管，Taiwan Semiconductor### 双极晶体管，Taiwan Semiconductor

小信号 PNP ，

### 双极晶体管，Taiwan Semiconductor

欧时:
Taiwan Semiconductor BC856B RF , PNP 晶体管, 100 mA, Vce=65 V, HFE:220, 3引脚 SOT-23封装

艾睿:
Compared to other transistors, the PNP BC856B RF general purpose bipolar junction transistor, developed by Taiwan Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
Transistor PNP 65V 100mA 250mW SOT23

Verical:
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R