IGBT 1200V 86A 480W 通孔 TO-247（IXYH）
You won"t need to worry about any lagging in your circuit with this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 480000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with xpt technology.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXYH40N120B3D1 | IXYS Semiconductor | 下载 |
| IXYH50N65C3D1 | IXYS Semiconductor | 下载 |
| IXYH40N65C3H1 | IXYS Semiconductor | 下载 |
| IXYH82N120C3 | IXYS Semiconductor | 下载 |
| IXYH20N65C3 | IXYS Semiconductor | 下载 |
| IXYH30N65C3H1 | IXYS Semiconductor | 下载 |
| IXYH50N120C3D1 | IXYS Semiconductor | 下载 |
| IXYH40N120C3D1 | IXYS Semiconductor | 下载 |
| IXYH40N90C3 | IXYS Semiconductor | 下载 |
| IXYH30N120C3D1 | IXYS Semiconductor | 下载 |
| IXYH100N65C3 | IXYS Semiconductor | 下载 |