L6385E

L6385E概述

STMICROELECTRONICS  L6385E  驱动器, IGBT, MOSFET, 高压侧和低压侧, -0.3V至17V电源, 650mA输出, 105ns延迟, DIP-8

MOSFET & IGBT 驱动器,STMicroelectronics

### MOSFET & IGBT 驱动器,STMicroelectronics


得捷:
IC GATE DRVR HALF-BRIDGE 8DIP


欧时:
STMicroelectronics L6385E 双 半桥 MOSFET 功率驱动器, 0.65A, 最大为 17 V电源, 8引脚 PDIP封装


e络盟:
驱动器, IGBT, MOSFET, 高压侧和低压侧, -0.3V至17V电源, 650mA输出, 105ns延迟, DIP-8


艾睿:
Ideal for high voltage transistors this L6385E power driver manufactured by STMicroelectronics will help switch junction. This device has a maximum propagation delay time of 110typ ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -45 °C and a maximum of 125 °C. This device has a maximum of 17 V.


安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube


富昌:
L6385E 系列 17 V 400 mA 高压 高压侧和低压侧 驱动器 - DIP-8


Chip1Stop:
Driver 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube


TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; DIP8; Package: tube


Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin PDIP Tube


Newark:
DRIVER, MOSFET, IGBT, 600V, 0.65A, 8DIP


儒卓力:
**HaBr MOSvIGBTDr 600V DIP-8 THT **


Online Components:
Driver 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube


L6385E数据文档
型号 品牌 下载
L6385E

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L6384E

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L6387E

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L6386ED

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L6385ED

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L6387ED013TR

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L6387ED

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L6388ED

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L6388E

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L6386AD

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L6386E

ST Microelectronics 意法半导体

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