ISO5851DW

TEXAS INSTRUMENTS  ISO5851DW  芯片, 场效应管, MOSFET/晶体管, IGBT驱动器, 反相/非反相, WSOIC16

The is a reinforced isolated Gate Driver for IGBTs and MOSFETs with 2.5A source and 5A sink current. The input side operates from a single 3 to 5.5V supply. The output side allows for a supply range from minimum 15V to maximum 30V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns assures accurate control of the output stage. An internal desaturation DESAT fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect the gate driver output is driven low to VEE2 potential turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

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Output short-circuit clamp

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Fault alarm upon desaturation detection is signalled on FLT and reset through RST

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Input and output under-voltage lock-out UVLO with ready RDY pin indication

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Active output pull-down and default low outputs with low supply or floating inputs

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CMOS compatible input

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Rejects input pulses and noise transients shorter than 20ns

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2A Active miller clamp

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15 to 30V Output driver supply voltage

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100kV/µs Minimum common-mode transient immunity CM at VCM=1500V

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Green product and no Sb/Br