DS1230W-100+

MAXIM INTEGRATED PRODUCTS  DS1230W-100+  芯片, 存储器, NVRAM

The is a 3.3v, 256K non-volatile SRAM in 28 pin EDIP package. This device is organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. DS1230W device can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance.

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Supply voltage range is 3V to 3.6V

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10 years minimum data retention in the absence of external power

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Data is automatically protected during power loss

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Unlimited write cycles, low power consumption

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Read and write access times of 100ns

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Operating temperature range from 0°C to 70°C