SI2328DS-T1-GE3

VISHAY  SI2328DS-T1-GE3  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 195 mohm, 10 V, 4 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range

欧时:
### N 通道 MOSFET，100V 至 150V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

贸泽:
MOSFET 100V 1.5A 1.25W 250mohm @ 10V

e络盟:
VISHAY  SI2328DS-T1-GE3  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 195 mohm, 10 V, 4 V

艾睿:
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R

富昌:
Si2328DS 系列 100 V 250 mOhm 表面贴装 N 沟道 MOSFET - SOT-23-3 TO-236

Verical:
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2328DS-T1-GE3  MOSFET Transistor, N Channel, 1.15 A, 100 V, 195 mohm, 10 V, 4 V

儒卓力:
**N-CHANNEL-FET 1,5A 100V SOT23 **