IXDI602SIA

IXDI602SIA概述

IXDI 系列 35 V 2 A 2.5 Ohm 低压侧 超快 MOSFET 驱动器 - SOIC-8

低端 栅极驱动器 IC 反相 8-SOIC


得捷:
IC GATE DRVR LOW-SIDE 8SOIC


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


艾睿:
Switch between states in a high power transistor by using this IXDI602SIA power driver developed by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


Chip1Stop:
Driver 2A 2-OUT Lo Side Inv 8-Pin SOIC Tube


Verical:
Driver 2A 2-OUT Low Side Inv 8-Pin SOIC Tube


IXDI602SIA数据文档
型号 品牌 下载
IXDI602SIA

IXYS Semiconductor

下载
IXDI509SIAT/R

IXYS Semiconductor

下载
IXDI509D1T/R

IXYS Semiconductor

下载
IXDI514D1T/R

IXYS Semiconductor

下载
IXDI514SIAT/R

IXYS Semiconductor

下载
IXDI604SI

IXYS Semiconductor

下载
IXDI609YI

IXYS Semiconductor

下载
IXDI604SIA

IXYS Semiconductor

下载
IXDI602D2TR

IXYS Semiconductor

下载
IXDI604SIATR

IXYS Semiconductor

下载
IXDI604PI

IXYS Semiconductor

下载

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