BCX41E6327HTSA1

Infineon BCX41E6327HTSA1 , NPN 双极晶体管, 800mA, Vce=125 V, HFE:63, 100 MHz, 3引脚 SOT-23封装

通用 NPN ，

得捷:
TRANS NPN 125V 0.8A SOT23

欧时:
Infineon BCX41E6327HTSA1 , NPN 双极晶体管, 800mA, Vce=125 V, HFE:63, 100 MHz, 3引脚 SOT-23封装

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Silicn AF/SWITCH TRANSISTOR

e络盟:
单晶体管 双极, NPN, 125 V, 100 MHz, 330 mW, 800 mA, 25 hFE

艾睿:
Look no further than Infineon Technologies&s; NPN BCX41E6327HTSA1 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 125 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT NPN 125V 0.8A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 125V 0.8A 330mW Automotive 3-Pin SOT-23 T/R

Newark:
# INFINEON  BCX41E6327HTSA1  Bipolar BJT Single Transistor, NPN, 125 V, 100 MHz, 330 mW, 800 mA, 25

Win Source:
TRANS NPN 125V 0.8A SOT-23