IXTY1R6N100D2

IXTY1R6N100D2概述

Trans MOSFET N-CH 1kV 1.6A 3Pin2+Tab TO-252AA

N-Channel 1000V 1.6A Tc 100W Tc Surface Mount TO-252, D-Pak


得捷:
MOSFET N-CH 1000V 1.6A TO252


贸泽:
MOSFET N-CH MOSFETS D2 1000V 1.6A


艾睿:
Create an effective common drain amplifier using this IXTY1R6N100D2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 100000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


富昌:
N-Channel 1000 V 1.6 A 10 Ω Surface Mount Power Mosfet - TO-252


Verical:
Trans MOSFET N-CH 1KV 1.6A 3-Pin2+Tab TO-252AA


DeviceMart:
MOSFET N-CH 1000V 1.6A DPAK


IXTY1R6N100D2数据文档
型号 品牌 下载
IXTY1R6N100D2

IXYS Semiconductor

下载
IXTY12N06T

IXYS Semiconductor

下载
IXTY64N055T

IXYS Semiconductor

下载
IXTY50N085T

IXYS Semiconductor

下载
IXTY55N075T

IXYS Semiconductor

下载
IXTY2N80P

IXYS Semiconductor

下载
IXTY3N50P

IXYS Semiconductor

下载
IXTY4N65X2

IXYS Semiconductor

下载
IXTY1R6N50P

IXYS Semiconductor

下载
IXTY2N100P

IXYS Semiconductor

下载
IXTY2R4N50P

IXYS Semiconductor

下载

锐单商城 - 一站式电子元器件采购平台