IKA15N65H5

INFINEON  IKA15N65H5  单晶体管, IGBT, 15 A, 1.65 V, 33.3 W, 650 V, TO-220, 3 引脚

Summary of Features:

.

650V breakthrough voltage

.

Compared to ’s best-in-class HighSpeed 3 family

.

Factor 2.5 lower Q g

.

Factor 2 reduction in switching losses

.

200mV reduction in V CEsat

.

Co-packed with Infineon’s new Rapid Si-diode technology

.

Low C OES/E OSS

.

Mild positive temperature coefficient V CEsat

.

Temperature stability of V f

Benefits:

.

Best-in-class efficiency, resulting in lower junction and

case temperature leading to higher device reliability

.

50V increase in the bus voltage possible without compromising

reliability

.

Higher power density design

Target Applications:

  

.

Uninterruptible Power Supplies

.

Welding